MRF5S9080NR1 MRF5S9080NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM Application
?
Typical GSM Performance: VDD
= 26 Volts, I
DQ
= 600 mA,
Pout
= 80 Watts
CW, Full Frequency Band (869-894 MHz or 921-960 MHz).
Power Gain ? 18.5 dB
Drain Efficiency ? 60%
GSM EDGE Application
?
Typical GSM EDGE Performance: VDD
= 26 Volts, I
DQ
= 550 mA,
Pout
= 36 Watts Avg., Full Frequency Band (869-894 MHz or
921-960 MHz).
Power Gain ? 19 dB
Drain Efficiency ? 42%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM ? 2.5% rms
?
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
200C Capable Plastic Package
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 80 W CW
Case Temperature 80°C, 36 W CW
RθJC
0.50
0.54
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S9080N
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF5S9080NR1
MRF5S9080NBR1
869-960 MHz, 80 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S9080NBR1
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S9080NR1
?
Freescale Semiconductor, Inc., 2006. All rights reserved.
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